|
|
PDF IRF9910 Data sheet ( Hoja de datos )
| Número de pieza | IRF9910 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF9910 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Applications
l Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
PD - 95869
IRF9910
HEXFET® Power MOSFET
VDSS
RDS(on) max
:20V Q1 13.4m @VGS = 10V
:Q2 9.3m @VGS = 10V
ID
10A
12A
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Q1 Max.
Q2 Max.
20
± 20
10 12
8.3 9.9
83 98
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
Notes through
are on page 10
www.irf.com
1
04/28/04
Free Datasheet http://www.datasheet4u.com/
1 page  
Q1 - Control FET
1.5
ID = 10A
VGS = 10V
Typical Characteristics
IRF9910
Q2 - Synchronous FET
1.5
ID = 12A
VGS = 10V
1.0 1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
40
35 ID = 10A
30
25
20 TJ = 125°C
15
10
TJ = 25°C
5
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 17. Typical On-Resistance vs. Gate Voltage
www.irf.com
0.5
-60 -40 -20 0 20 40 60 80 100120140160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
25
ID = 12A
20
15
TJ = 125°C
10
5 TJ = 25°C
0
2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 18. Typical On-Resistance vs. Gate Voltage
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF9910.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF9910 | Power MOSFET ( Transistor ) | International Rectifier |
| IRF9910PBF | Power MOSFET ( Transistor ) | International Rectifier |
| IRF9910TRPBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |