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PDF IRF7380PBF Data sheet ( Hoja de datos )

Número de pieza IRF7380PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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Applications
l High frequency DC-DC converters
l Lead-Free
IRF7380PbF
VDSS
80V
HEXFET® Power MOSFET
RDS(on) max
ID
:73m @VGS = 10V 3.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S1
G1
S2
G2
18
27
36
45
Top View
D1
D1
D2
D2
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 100°C
IDM
PD @TA = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
fJunction-to-Ambient (PCB Mount)
Max.
80
± 20
3.6
2.9
29
2.0
0.02
2.3
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
Notes  through † are on page 8
1 www.irf.com © 2013 International Rectifier
September 16, 2013

1 page




IRF7380PBF pdf
IRF7380PbF
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01 0.1
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+T A
1 10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
5 www.irf.com © 2013 International Rectifier
September 16, 2013

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