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PDF IRF6811STRPBF Data sheet ( Hoja de datos )

Número de pieza IRF6811STRPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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l RoHS Compliant and Halogen Free 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
l Footprint compatible to DirectFET
PD-97634
IRF6811SPbF
IRF6811STRPbF
DirectFET®plus Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 2.8m@ 10V 4.1m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC 4.2nC 1.4nC 23nC 11nC 1.6V
DG
SD
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
SQ
MP
ISOMETRIC
Description
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±16
19
15
74
150
32
15
Units
V
A
mJ
A
12
10 ID = 19A
8
6 TJ = 125°C
4
2 TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0
10.0
8.0
6.0
ID= 15A
VDS= 20V
VDS= 13V
VDS= 5.0V
4.0
2.0
0.0
0
5 10 15 20 25
QG Total Gate Charge (nC)
30
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.28mH, RG = 50, IAS = 15A.
1
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IRF6811STRPBF pdf
1000
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6811SPbF
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10msec
1
DC
0.1 TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
140
120
100
2.4
2.2
2.0
1.8
1.6
1.4
ID = 25µA
ID = 250µA
1.2 ID = 1.0mA
1.0 ID = 1.0A
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.4A
2.2A
BOTTOM 15A
80
60
40
20
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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