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PDF IRF6802SDTRPBF Data sheet ( Hoja de datos )

Número de pieza IRF6802SDTRPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 97769
IRF6802SDPbF
IRF6802SDTRPbF
DirectFET®plus Power MOSFET ‚
l RoHs Compliant Containing No Lead and Bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 3.2m@ 10V 4.5m@ 4.5V
l Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
Qg tot Qgd
8.8nC 3.1nC
Qgs2
1.1nC
Qrr
22nC
Qoss
13nC
Vgs(th)
1.6V
l Optimized for Control FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
GG
DD
l 100% Rg tested
SS
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST SA MQ MX MT
SA
MP
DirectFET®plus ISOMETRIC
MB
Description
The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6802SDTRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6802SDTRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±16
16
13
57
130
66
13
Units
V
A
mJ
A
10
ID = 16A
8
6 TJ = 125°C
4
2 TJ = 25°C
0
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0
10.0
8.0
ID= 13A
VDS= 20V
VDS= 13V
VDS= 6.0V
6.0
4.0
2.0
0.0
0
5 10 15 20 25
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.78mH, RG = 50, IAS = 13A.
1
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IRF6802SDTRPBF pdf
1000
TJ = 150°C
100 TJ = 25°C
TJ = -40°C
10
IRF6802SDTRPbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
1msec
10
DC 10msec
100μsec
1
VGS = 0V
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
300
250
200
1
Ta = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
1
10 100
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
2.2
2.0
1.8
1.6 ID = 35μA
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.8A
2.6A
BOTTOM 13A
150
100
50
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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