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PDF IRF6720S2TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6720S2TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97315
IRF6720S2TRPbF
IRF6720S2TR1PbF
l RoHS Compliant Containing No Lead and Bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 6.0mΩ@ 10V 9.8mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
7.9nC 2.8nC 0.9nC 14nC 5.1nC 2.0V
Applicable DirectFET Outline and Substrate Outline
S1 DirectFET ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6720S2PbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6720S2PbF has been optimized for the control FET socket of synchronous buck oper-
ating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
30 V
±20
11
9.2 A
35
92
12 mJ
8.8 A
20 12.0
ID = 11A
10.0 ID= 8.8A
VDS= 24V
16 8.0 VDS= 15V
12
8
TJ = 25°C
4
05
TJ = 125°C
10 15 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
4.0
2.0
0.0
0 2 4 6 8 10 12 14 16 18 20
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.31mH, RG = 25Ω, IAS = 8.8A.
1
Free Datasheet http://www.da0ta4sh/0ee7t4/u0.8com/
1 page  
100
10
TJ = 175°C
TJ = 25°C
1 TJ = -40°C
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6720S2TR/TR1PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
1msec
1 10msec
DC
0.1 TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
35 3.5
30 3.0
25 2.5
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
50
TJ = 25°C
40
30
TJ = 175°C
20
2.0
ID = 25µA
1.5 ID = 250µA
1.0 ID = 1.0mA
ID = 1.0A
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
320
ID
280 TOP 1.5A
2.4A
240 BOTTOM 8.8A
200
160
120
210 VDS = 15V
380µs PULSE WIDTH
80
40
0
0 20 40 60 80 100
ID,Drain-to-Source Current (A)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Typ. Forward Transconductance vs. Drain Current Fig 15. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5
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