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PDF DMP57D5UFB Data sheet ( Hoja de datos )
| Número de pieza | DMP57D5UFB | |
| Descripción | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMP57D5UFB
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance:
RDS(ON) ≤ 6Ω @ VGS = -4.0V
RDS(ON) ≤ 8Ω @ VGS = -2.5V
• Very Low Gate Threshold Voltage, ≤ 1.0V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Gate, 1KV
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.001 grams (approximate)
DFN1006-3
Drain
ESD PROTECTED TO 1kV
BOTTOM VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
Pulsed Drain Current (Note 3)
TA = 25°C
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
S
D
G
TOP VIEW
Internal Schematic
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Symbol
VDSS
VGSS
ID
IDM
Value
-50
±8
-200
-700
Units
V
V
mA
mA
Symbol
PD
RθJA
TJ, TSTG
Value
425
294
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
BVDSS
IDSS
IGSS
-50
⎯
⎯
⎯⎯
V
⎯ -10 μA
⎯ ±500 nA
Gate Threshold Voltage
VGS(th)
-0.7
⎯
-1.0
V
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
4.6
6
6
8
Ω
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
|Yfs| 100
⎯
⎯ mS
VSD ⎯
⎯ -1.2 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss ⎯ 29 ⎯ pF
Coss
⎯
7.3
⎯
pF
Crss
⎯
2.5
⎯
pF
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = -250μA
VDS = -50V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.0V, ID = -100mA
VGS = -2.5V, ID = -80mA
VDS = -5V, ID = -100mA
VGS = 0V, IS = -100mA
VDS = -4V, VGS = 0V
f = 1.0MHz
DMP57D5UFB
Document number: DS31274 Rev. 3 - 2
1 of 4
www.diodes.com
March 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
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