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PDF DMG6602SVT Data sheet ( Hoja de datos )

Número de pieza DMG6602SVT
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMG6602SVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V(BR)DSS
Q1 30V
Q2 -30V
RDS(on)
60mΩ @ VGS = 10V
100mΩ @ VGS = 4.5V
95mΩ @ VGS = -10V
140mΩ @ VGS = -4.5V
ID
TA = 25°C
3.4A
2.7A
-2.8A
-2.3A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Backlighting
DC-DC Converters
Power management functions
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free Finish; RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
TSOT26
Top View
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
Top View
Q1
D1
Q2
D2
G1 G2
S1
N-Channel
S2
P-Channel
Ordering Information (Note 3)
Notes:
Part Number
DMG6602SVT-7
Case
TSOT26
Packaging
3000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
66C
66C = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb Mar
23
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
2012
Z
Apr
4
2013
A
May Jun
56
2014
B
2015
C
Jul Aug Sep
78
9
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2016
D
2017
E
Oct Nov Dec
OND
May 2012
Free Datash©eeDt ihotdtpe:s//Iwncwowrp.doartaatsehdeet4u.com/

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DMG6602SVT pdf
1000
100
COSS Ave (pF)
f = 1MHz
CISS Ave (pF)
CRSS Ave (pF)
10
0
100
10
5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
30
RDS(on)
Limited
PW = 100µs
1 DC
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
PW = 1ms
TA = 25°C
VGS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
100
DMG6602SVT
10
8
VDS = 10V
ID = 3.0A
6
4
2
0
0 2 4 6 8 10
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate Charge
DMG6602SVT
Document number: DS35106 Rev. 6 - 2
5 of 10
www.diodes.com
May 2012
Free Datash©eeDt ihotdtpe:s//Iwncwowrp.doartaatsehdeet4u.com/

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