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PDF 2N3442 Data sheet ( Hoja de datos )

Número de pieza 2N3442
Descripción NPN HIGH POWER SILICON TRANSISTOR
Fabricantes Microsemi Corporation　
Logotipo Microsemi Corporation Logotipo



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No Preview Available ! 2N3442 Hoja de datos, Descripción, Manual

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/370
Devices
2N3442
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 250C (1)
@ TC = 250C (2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 34.2 mW/0C for TA > 250C
2) Derate linearly 668 mW/0C for TC > 250C
Symbol
VCEO
VCBO
VCER
VEBO
IB
IC
PT
TJ, Tstg
Value
140
160
150
7.0
7.0
10
6.0
117
-55 to +200
Symbol
RθJC
Max.
1.5
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Voltage
IC = 3.0 Adc
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.5 Adc, RBE = 100 Ω
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 1.5 Adc, VEB = 1.5 Vdc
V(BR)CEX
Collector-Base Cutoff Current
VCB = 140 Vdc, VEB = 1.5 Vdc
ICEX
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Unit
0C/W
Min.
140
150
160
TO-3* (TO-204AA)
*See Appendix A for
Package Outline
Max.
Unit
Vdc
Vdc
Vdc
1.0 mAdc
1.0 mAdc
120101
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