(PDF) 2N3440L Datasheet - NPN LOW POWER SILICON TRANSISTOR

Número de pieza	2N3440L
Descripción	NPN LOW POWER SILICON TRANSISTOR
Fabricantes	Microsemi Corporation
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No Preview Available ! TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 Devices 2N3439 2N3439L 2N3440 2N3440L Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @TA = 250C(1) @TC = 250C(2) Operating & Storage Temperature Range 1) Derate linearly 4.57 mW/0C for TA > +250C 2) Derate linearly 28.5 mW/0C for TC > +250C Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3439 2N3440 350 250 450 300 7.0 1.0 0.8 5.0 -55 to +200 ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 mAdc 2N3439 2N3440 V(BR)CEO Collector-Emitter Cutoff Current VCE = 300 Vdc 2N3439 ICEO VCE = 200 Vdc 2N3440 Emitter-Base Cutoff Current VEB = 7.0 Vdc IEBO Units Vdc Vdc Vdc Adc W W/0C 0C Min. 350 250 TO- 5* 2N3439L, 2N3440L TO-39* (TO205-AD) 2N3439, 2N3440 *See Appendix A for Package Outline Max. Unit Vdc 2.0 µAdc 2.0 µAdc 10 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 1 page

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PDF 2N3440L Data sheet ( Hoja de datos )