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Número de pieza | 2N3415 | |
Descripción | NPN General Purpose Amplifier | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N3415 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! 2N3415
Discrete POWER & Signal
Technologies
E
CB
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
25
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N3415
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2N3415.PDF ] |
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