|
|
PDF ICE6N70FP Data sheet ( Hoja de datos )
| Número de pieza | ICE6N70FP | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Icemos | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de ICE6N70FP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
Preliminary Data Sheet
ICE6N70FP
ICE6N70FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
6A
700V
0.65Ω
26nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings b , at Tj=25oC, unless otherwise specified
1=Gate, 2=Drain,
3=Source
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=3A
6A
18 A
160 mJ
Avalanche current, repetitive
I AR limited by Tjmax
3A
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=6A,
Tj=125oC
50 V/ns
Gate source voltage
Static
VGS
AC (f>1Hz)
±20
±30
V
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25oC
M 2.5 screws
65
-55 to +150
50
W
oC
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-6N70FP-000-3
05/15/2013
Free Datasheet http://www.datasheet41u.com/
1 page  
10000
Capacitance
Preliminary Data Sheet
ICE6N70FP
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1000
Ciss
100
Coss
10
Crss
1
0 100 200 300 400 500 600
VDS - Drain-to-Source Votlage (V)
Maximum Rated Forward Biased Safe Operating Area
100
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
10
10us
100us
1
1ms
0.1
RDS(on) Limit
Package Limit
Thermal Limit
DC
0.01
1
10 100
VDS - Drain-to-Source Voltage (V)
1000
1.1
ID = 1mA
1.0
0.9
0.8
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (˚C)
150
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
t - Time (seconds)
SP-6N70FP-000-3
05/15/2013
Free Datasheet http://www.datasheet45u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ICE6N70FP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ICE6N70FP | N-Channel Enhancement Mode MOSFET | Icemos |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |