DataSheet.es    


PDF ICE60N130 Data sheet ( Hoja de datos )

Número de pieza ICE60N130
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Icemos 
Logotipo Icemos Logotipo



Hay una vista previa y un enlace de descarga de ICE60N130 (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! ICE60N130 Hoja de datos, Descripción, Manual

Preliminary Data Sheet
ICE60N130
ICE60N130 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Optimized design for hard switching SMPS topologies
HALOGEN
FREE
Product Summary
ID TA=25oC 23A
BVDSS @Tjmax ID=250uA 650V
rDS(on)
VGS=10V 0.13Ω
Qg VDS=480V 82nC
Max
Min
Typ
Typ
D
G
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=11.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=23A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
Value
23
82
690
11.5
50.0
±20
±30
208
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-60N130-000-3
05/15/2013
Free Datasheet http://www.datasheet41u.com/

1 page




ICE60N130 pdf
10000
1000
100
Capacitance
Ciss
Coss
Preliminary Data Sheet
ICE60N130
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
ID = 1mA
1.0
10
Crss
1
0 100 200 300 400 500 600
VDS - Drain-to-Source Voltage (V)
Maximum Rated Forward Biased Safe Operating Area
100
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
10us
10
100us
1ms
1
10ms
DC
0.1
RDS(on) Limit
Package Limit
Thermal Limit
0.01
1
10 100
VDS - Drain-to-Source Voltage (V)
1000
0.9
0.8
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (˚C)
150
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
t - Time (seconds)
SP-60N130-000-3
05/15/2013
Free Datasheet http://www.datasheet45u.com/

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet ICE60N130.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
ICE60N130N-Channel Enhancement Mode MOSFETIcemos
Icemos
ICE60N130N-Channel Enhancement Mode MOSFETMicross Components
Micross Components
ICE60N130FPN-Channel Enhancement Mode MOSFETIcemos
Icemos
ICE60N130FPN-Channel Enhancement Mode MOSFETMicross Components
Micross Components

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar