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PDF ICE47N60W Data sheet ( Hoja de datos )
| Número de pieza | ICE47N60W | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Icemos | |
| Logotipo |  |
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Preliminary Data Sheet
ICE47N60W
ICE47N60W N-Channel
Enhancement Mode MOSFET
Features
• TO247 package
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=1mA
VGS=10V
VDS=350V
47A
600V
0.063Ω
187nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247
1:G, 2:D,
3:S, 4:D,
(TO-247)
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=24A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=47A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
47
117
1600
24
50
±20
±30
417
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-47N60W-000-2
05/15/2013
Free Datasheet http://www.datasheet41u.com/
1 page  
100000
10000
Capacitance
Ciss
1000
100
Coss
10
1
0
Crss
100 200 300 400 500
VDS - Drain-to-Source Voltage (V)
600
Maximum Rated Forward Biased Safe Operating Area
1000
100
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
10us
10 100us
1ms
1 10ms
DC
0.1
RDS(on) Limit
Package Limit
Thermal Limit
0.01
1
10 100
VDS - Drain-to-Source Voltage (V)
1000
Preliminary Data Sheet
ICE47N60W
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
ID = 1mA
1.0
0.9
0.8
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (˚C)
150
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
t - Time (s)
SP-47N60W-000-2
05/15/2013
Free Datasheet http://www.datasheet45u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ICE47N60W.PDF ] | |
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