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PDF ICE11N65FP Data sheet ( Hoja de datos )
| Número de pieza | ICE11N65FP | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Icemos | |
| Logotipo |  |
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Preliminary Data Sheet
ICE11N65FP
ICE11N65FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
11A
ID=250uA
VGS=10V
VDS=480V
650V
0.25
59nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings b , at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
1=Gate, 2=Drain,
3=Source
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=7.5A
11 A
35 A
460 mJ
Avalanche current, repetitive
I AR limited by Tjmax
7.5
A
MOSFET dv/dt ruggedness
Gate source voltage
dv/dt
VGS
VDS=480V, ID=11A,
Tj=125oC
static
AC (f>1Hz)
50
±20
±30
V/ns
V
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25°C
M 2.5 screws
35
-55 to +150
50
W
°C
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-11N65FP-000-3a
06/13/2013
Free Datasheet http://www.datasheet41u.com/
1 page  
100000
Capacitance
10000
1000
100
Ciss
Coss
10
1
0
Crss
100 200 300 400 500
VDS - Drain-to-Source Voltage (V)
600
Maximum Rated Forward Biased Safe Operating Area
100
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
10
10us
1
0.1
RDS(on) Limit
Package Limit
Thermal Limit
100us
1ms
10ms
DC
0.01
1
10 100
VDS - Drain-to-Source Voltage (V)
1000
Preliminary Data Sheet
ICE11N65FP
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
ID = 1mA
1.0
0.9
0.8
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (˚C)
150
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.10
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06
1.0E-04
1.0E-02
t - Time (s)
1.0E+00
SP-11N65FP-000-3a
06/13/2013
Free Datasheet http://www.datasheet45u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ICE11N65FP.PDF ] | |
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