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Número de pieza | UPA863TD | |
Descripción | NPN SILICON RF TRANSISTOR | |
Fabricantes | CEL | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPA863TD (archivo pdf) en la parte inferior de esta página. Total 27 Páginas | ||
No Preview Available ! DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
μPA863TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5436, 2SC5800)
Q1: Built-in high gain transistor
fT = 12.0 GHz TYP., ⏐S21e⏐2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 4.5 GHz TYP., ⏐S21e⏐2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
3-pin thin-type ultra super minimold part No.
Q1
2SC5436
Q2
2SC5800
ORDERING INFORMATION
Part Number
μPA863TD-A
μPA863TD-T3-A
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, consult your nearby sales office.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. P15686EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Free Datasheet http://www.datasheet4u.com/
1 page Q1
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.5
0.6 0.7 0.8 0.9
Base to Emitter Voltage VBE (V)
1.0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.5
0.6 0.7 0.8 0.9
Base to Emitter Voltage VBE (V)
1.0
μPA863TD
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9
Base to Emitter Voltage VBE (V)
1.0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9
Base to Emitter Voltage VBE (V)
1.0
Data Sheet P15686EJ1V0DS
5
Free Datasheet http://www.datasheet4u.com/
5 Page Q1
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
MSG
MAG
16
|S21e|2
12
8
4
VCE = 1 V
f = 1 GHz
0
1
10
Collector Current IC (mA)
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 1 V
f = 2 GHz
16
MSG
12
MAG
8 |S21e|2
4
0
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 4 GHz
8
MAG
6
4
|S21e|2
2
0
1 10 100
Collector Current IC (mA)
μPA863TD
Q2
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20 VCE = 1 V
f = 1 GHz MSG
MAG
15
|S21e|2
10
5
0
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
15 VCE = 1 V
f = 2 GHz
MAG
10
5 |S21e|2
0
–5
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
15
VCE = 1 V
f = 4 GHz
10
MSG
MAG
5
0 |S21e|2
–5
–10
1
10
Collector Current IC (mA)
100
Data Sheet P15686EJ1V0DS
11
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 27 Páginas | |
PDF Descargar | [ Datasheet UPA863TD.PDF ] |
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