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PDF FDPF12N60NZ Data sheet ( Hoja de datos )
| Número de pieza | FDPF12N60NZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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March 2013
FDP12N60NZ / FDPF12N60NZ
N-Channel UniFETTM II MOSFET
600 V, 12 A, 650 m
Features
• RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A
• Low Gate Charge ( Typ. 26 nC)
• Low Crss ( Typ. 12 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G
D
S
TO-220
G
D
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
G
S
Symbol
Parameter
FDP12N60NZ FDPF12N60NZ
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
600
±30
12 12*
7.2 7.2*
48 48*
565
12
24
20
10
240 39
2.0 0.3
TJ, TSTG Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Symbol
Parameter
RJC
RCS
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
1
FDP12N60NZ FDPF12N60NZ
0.52 3.2
0.5 -
62.5 62.5
Unit
oC/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Figure 12. Transient Thermal Response Curve
-FDPF12N60NZ
5
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01 Single pulse
0.001
10-5
10-4
P
DM
* Notes :
t1
t
2
1. ZJC(t) = 3.2oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
1
10 102 103
Rectangular Pulse Duration [sec]
Figure 13. Transient Thermal Response Curve
-FDP12N60NZ
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
10-5
10-4
PD M
t1
t2
* Notes :
1. ZJC(t) = 0.52oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
1
10 102 103
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDPF12N60NZ.PDF ] | |
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