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PDF FDPF12N50 Data sheet ( Hoja de datos )
| Número de pieza | FDPF12N50 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP12N50 / FDPF12N50
N-Channel MOSFET
500V, 11.5A, 0.65Ω
Features
• RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A
• Low gate charge ( Typ. 22nC)
• Low Crss ( Typ. 11pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
June 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP12N50 FDPF12N50
500
±30
11.5 11.5 *
6.9 6.9 *
46 46 *
456
11.5
16.7
4.5
165 42
1.33 0.3
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP12N50
0.75
0.5
62.5
FDPF12N50
3.0
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP12N50 / FDPF12N50 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP12N50
3
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single pulse
1E-3
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.75oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
100
101
Figure 11-2. Transient Thermal Response Curve - FDPF12N50
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-4
10-3
PDM
t1
t2
* Notes :
1. ZθJC(t) = 3oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
FDP12N50 / FDPF12N50 Rev. A
5 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDPF12N50.PDF ] | |
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