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PDF FDMC8030 Data sheet ( Hoja de datos )

Número de pieza FDMC8030
Descripción Dual N-Channel Power MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMC8030 Hoja de datos, Descripción, Manual

FDMC8030
Dual N-Channel Power Trench® MOSFET
40 V, 12 A, 10 mΩ
August 2011
Features
General Description
„ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
„ Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
„ Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A
„ Termination is Lead-free and RoHS Compliant
This device includes two 40V N-Channel MOSFETs in a dual
Power 33 (3 mm X 3 mm MLP) package. The package is
enhanced for exceptional thermal performance.
Applications
„ Battery Protection
„ Load Switching
„ Point of Load
Pin 1
G1 S1 S1 S1
D1
D2
G2 S2 S2 S2
Power 33
G2 8
Bottom Drain2 Contact
S2 7
Q2
S2 6
Q1
S2 5
Bottom Drain1 Contact
1 G1
2 S1
3 S1
4 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
40
±12
12
50
21
1.9
0.8
-55 to +150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
155
°C/W
Device Marking
FDMC8030
Device
FDMC8030
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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FDMC8030 pdf
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-4
SINGLE PULSE
RθJA = 155 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2011 Fairchild Semiconductor Corporation
FDMC8030 Rev.C
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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