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PDF 2N2907 Data sheet ( Hoja de datos )

Número de pieza 2N2907
Descripción 1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS
Fabricantes STMicroelectronics 
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2N2905
2N2907
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905 and 2N2907 are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905) and in Jedec TO-18 (for 2N2907) metal
case. They are designed for high speed saturated
switching and general purpose application.
2N2905 approved to CECC 50002-102,
2N2907 approved to CECC 50002-103
available on request.
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
V EBO
IC
Ptot
Tstg
Tj
Parameter
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb 25 oC
for 2N2905
for 2N2907
at Tcase 25 oC
for 2N2905
for 2N2907
St orage Temperature
Max. Operating Junction Temperature
November 1997
Value
-60
-40
-5
-0.6
0.6
0.4
3
1.8
-65 to 200
200
Unit
V
V
V
A
W
W
W
W
oC
oC
1/5

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2N2907 pdf
2N2905/2N2907
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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...
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