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PDF 2N2905A Data sheet ( Hoja de datos )
| Número de pieza | 2N2905A | |
| Descripción | HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
2N2905A
HIGH SPEED
MEDIUM POWER
PNP SWITCHING TRANSISTOR
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
5.08 (0.200)
typ.
2
13
2.54
(0.100)
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
45˚
TO39 METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector - Base Voltage
–60V
VCEO
Collector - Emitter Voltage
–60V
VEBO
Emitter - Base Voltage
–5V
IC Collector Current Continuous
600mA
PD Total Device Dissipation @ TA = 25°C
600mW
Derate above 25°C
3.43mW / °C
PD Total Device Dissipation @ TC = 25°C
Derate above 25°C
3W
17.2mW / °C
TJ , TSTG Operating and Storage Junction Temperature Range
–65 to +200°C
THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction to Ambient
RqJC Thermal Resistance, Junction to Case
292°C/W
58°C/w
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 6/99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N2905A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| 2N2905 | PNP SILICON PLANAR TRANSISTORS |  Siemens Semiconductor Group |
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