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PDF K3686-01 Data sheet ( Hoja de datos )
| Número de pieza | K3686-01 | |
| Descripción | MOSFET ( Transistor ) - 2SK3686-01 | |
| Fabricantes | Fuji Electric | |
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Hay una vista previa y un enlace de descarga de K3686-01 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SK3686-01 FUJI POWER MOSFET
Super FAP-G Series
200509
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Outline Drawings [mm]
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
600 V
VDSX *5
600 V
Continuous drain current
ID
±16 A
Pulsed drain current
ID(puls]
±64 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
16
A
Maximum avalanche energy
EAS
*1
242.7
mJ
Maximum drain-source dV/dt
dVDS/dt *4
20 kV/μs
Peak diode recovery dV/dt
dV/dt *3
5 kV/μs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.02
270
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch<=150°C
*3 IF<= -ID, -di/dt=50A/μs, Vcc <= BVDSS, Tch<= 150°C *4 VDS =< 600V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250μA VGS=0V
ID= 250μA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=8A VGS=10V
ID=8A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=8A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=300V
ID=16A
VGS=10V
L=1.74mH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/μs Tch=25°C
600
3.0
6.5
16
10
0.42
13
1590
200
11
29
16
58
8
34
12
10
1.00
0.68
7.8
5.0
25
250
100
0.57
2390
300
17
43.5
24
87
12
51
18
15
1.50
V
V
μA
nA
Ω
S
pF
ns
nC
A
V
μs
μC
Thermalcharacteristics
Item
Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.463 °C/W
62.0 °C/W
Free Datasheet http://www.datasheet4u.co1m/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3686-01.PDF ] | |
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