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Número de pieza | CLA50E1200HB | |
Descripción | High Efficiency Thyristor | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! High Efficiency Thyristor
Single Thyristor
CLA 50 E 1200 HB
VRRM =
I T(AV)M =
I T(RMS) =
1200 V
50 A
79 A
Part number
CLA 50 E 1200 HB
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
21
3
Applications:
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Backside: anode
Package:
● Housing: TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Symbol
VRSM/DSM
VRRM/DRM
IR/D
VT
I T(AV)M
I T(RMS)
VT0
rT
R thJC
T VJ
Ptot
PGM
PGAV
I TSM
I²t
CJ
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1200 V
VR/D = 1200 V
forward voltage drop
IT = 50 A
IT = 100 A
IT = 50 A
IT = 100 A
average forward current
TC = 125°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. gate power dissipation
average gate power dissipation
max. forward surge current
value for fusing
junction capacitance
tP = 30 µs
tP = 300 µs
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V f = 1 MHz
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 150°C
TVJ = 150°C
TC = 25°C
TC = 150°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
Ratings
min. typ. max. Unit
1300 V
1200 V
50 µA
4 mA
1.32 V
1.60 V
1.27 V
1.65 V
50 A
79 A
0.88 V
7.7 mΩ
0.25 K/W
-40 150 °C
500 W
10 W
5W
0.5 W
550 A
595 A
470 A
505 A
1.52 kA²s
1.48 kA²s
1.11 kA²s
1.06 kA²s
25 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20101215e
Free Datasheet http://www.datasheet4u.com/
1 page CLA 50 E 1200 HB
160
140
120
100
IT
80
[A] 60
40
TVJ = 125°C
20
0
0.0 0.5 1.0
TVJ = 25°C
1.5 2.0
2.5
VT [V]
Fig. 1 Forward characteristics
900
800
TVJ = 45°C
700
600
ITSM 500
400
[A]
300
200
TVJ = 125°C
100
50 Hz, 80% VRRM
0
0.01
0.1
t [s]
1
Fig. 2 Surge overload current
10000
VR = 0 V
I2t
1000
TVJ = 45°C
[A2s]
TVJ = 125°C
100
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time (1-10 ms)
10 1000
80
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
123
6
5
4
100
tgd
[µs]
10
IGD, TVJ = 150°C
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
0.1
1
10 100 1000 10000
IG [mA]
1
10
70
60
typ. Limit
TVJ = 125°C
IT(AV)M 50
40
[A]
30
20
10
100
IG [mA]
1000
0
0 20 40 60 80 100 120 140 160
TC [°C]
Fig. 4 Gate trigger characteristics
Fig. 5 Gate controlled delay time tgd
Fig. 6 Max. forward current
at case temperature
0.3
0.2
ZthJC
[K/W]
0.1
Ri ti
0.0075 0.0011
0.017 0.0019
0.057 0.0115
0.158 0.12
0.0105 0.5
0.0
0.001
0.01
0.1
t [s]
1
Fig. 7 Transient thermal impedance junction to case
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20101215e
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet CLA50E1200HB.PDF ] |
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