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PDF RJK6026DPP-E0 Data sheet ( Hoja de datos )
| Número de pieza | RJK6026DPP-E0 | |
| Descripción | MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK6026DPP-E0
600V - 5A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 2.0 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID Note4
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0614EJ0100
Rev.1.00
Jun 21, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
600
30
5
20
5
20
4
0.87
28.5
4.38
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0614EJ0100 Rev.1.00
Jun 21, 2012
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
RJK6026DPP-E0
10
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.011shot pulse
0.01
10 μ 100 μ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.38°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0614EJ0100 Rev.1.00
Jun 21, 2012
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK6026DPP-E0.PDF ] | |
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