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PDF 2SA2028 Data sheet ( Hoja de datos )
| Número de pieza | 2SA2028 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2028
Silicon PNP epitaxial planar type
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
−20
−20
−5
−1
−3
150
150
−55 to +125
Unit
V
V
V
A
A
mW
°C
°C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: AT
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
Conditions
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCE = −2 V, IC = −100 mA
IC = −200 mA, IB = −10 mA
VCB = −10 V, IE = 10 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min
−20
−20
−5
160
Typ Max
560
−40 −100
170
20 30
Unit
V
V
V
mV
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJC00042BED
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA2028.PDF ] | |
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