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PDF UPA2826T1S Data sheet ( Hoja de datos )

Número de pieza UPA2826T1S
Descripción N-channel MOSFET
Fabricantes Renesas 
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Data Sheet
μPA2826T1S
N-channel MOSFET
20 V , 27 A , 4.3 mΩ
R07DS0989EJ0100
Rev.1.00
Dec 25, 2012
Description
The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable
equipment .
Features
VDSS = 20 V (TA = 25°C)
Low on-state resistance
RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A)
2.5 V Gate-drive available
Small & thin type surface mount package with heat spreader
Pb-free and Halogen free
HWSON-8
Ordering Information
Part No.
LEAD PLATING
PACKING
Package
μ PA2826T1S-E2-AT1
Pure Sn(Tin)
HWSON-8
Tape 5000 p/reel
0.022 g TYP.
Note: 1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
Ratings
20
±12
±27
±81
1.5
3.8
20
150
55 to +150
Unit
V
V
A
A
W
W
W
°C
°C
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Case(Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
6.25
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
R07DS0989EJ0100 Rev.1.00
Dec 25, 2012
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UPA2826T1S pdf
μPA2826T1S
SWITCHING CHARACTERISTICS
1000
tf
VDD = 10V
VGS = 4.0V
RG = 10Ω
100 td(off)
tr
td(on)
10
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS=8V
10
4.5V
2.5V
1
0V
0.1
0.01
0
Pulsed
0.2 0.4 0.6 0.8
1
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT CHARACTERISTICS
4
VDD=4V
ID=15.8A
3 10V
27A
16V
2 27A
1
0
0 10 20 30 40 50
QG - Gate Charge - nC
R07DS0989EJ0100 Rev.1.00
Dec 25, 2012
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