|
|
Número de pieza | UPA2815T1S | |
Descripción | P-channel MOSFEF | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPA2815T1S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! μPA2815T1S
P-channel MOSFET
–30 V, –21 A, 11 mΩ
Data Sheet
R07DS0777EJ0101
Rev.1.01
May 28, 2013
Description
The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 11 mΩ MAX. (VGS = −10 V, ID = −21 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free
HWSON-8
Ordering Information
Part No.
Lead Plating
Packing
μPA2815T1S-E2-AT ∗1
Pure Sn
HWSON-8
Tape 5000 p/reel
typ. 0.022 g
Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Package
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
−30
m20
m21
m84
1.5
3.8
14.5
150
−55 to +150
19
36.1
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
8.6
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0777EJ0101 Rev.1.01
May 28, 2013
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page μPA2815T1S
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-30
VDS
VDD = –24 V
–15 V
-20 –6 V
-12
VGS
-10
-8
-6
-10 -4
ID = –21 A
-2
-0 -0
0 10 20 30 40 50
QG - Gate Charge - nC
Chapter Title
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100 VGS = –10 V
10 –4.5 V
1 0V
0.1
0.01
0
Pulsed
0.4 0.8 1.2
VF(S-D) - Source to Drain Voltage - V
R07DS0777EJ01001 Rev1.01
May 28, 2013
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet UPA2815T1S.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPA2815T1S | P-channel MOSFEF | Renesas |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |