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PDF UPA2806 Data sheet ( Hoja de datos )

Número de pieza UPA2806
Descripción MOS FIELD EFFECT TRANSISTOR
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No Preview Available ! UPA2806 Hoja de datos, Descripción, Manual

μ PA2806
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0008EJ0100
Rev.1.00
June 01, 2010
Description
The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications.
Features
Low on-state resistance
RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A)
Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz)
Built-in gate protection diode
Thin type surface mount package with heat spreader (8-pin HVSON)
RoHS Compliant
Ordering Information
Part No.
LEAD PLATING
PACKING
μ PA2806T1L-E1-AY 1
μ PA2806T1L-E2-AY 1
Pure Sn (Tin)
Tape 3000 p/reel
Note: 1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON (3333)
typ. 0.028 g
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
VDSS
100
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Total Power Dissipation (TC = 25°C) 2
ID(DC)
ID(pulse)
PT1
PT2
PT3
±21
±31
1.5
3.8
52
Channel Temperature
Tch
150
Storage Temperature
Single Avalanche Current 3
Single Avalanche Energy 3
Tstg
IAS
EAS
55 to +150
14.3
20.4
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance 1
Rth(ch-A)
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
83.3
2.4
°C/W
°C/W
Note: 1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
R07DS0008EJ0100 Rev.1.00
June 01, 2010
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

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UPA2806 pdf
μ PA2806
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100 10
80
VDD = 80 V
50 V
20 V
60
8
VGS
6
40 4
20
0
0
VDS
5 10
2
ID = 21 A
0
15 20
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs. DIODE
FORWARD CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1 10 100
IF - Diode Forward Current - A
Chapter Title
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
VGS = 10 V
0V
1
0.1
0.01
Pulsed
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 14.3 A
10
EAS = 20.4 mJ
VDD = 50 V
VGS = 20 0 V
RG = 25 Ω
1
10 μ 100 μ
1m
L - Inductive Load - H
10 m
R07DS0008EJ0100 Rev.1.00
June 01, 2010
Page 5 of 6
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