DataSheet.es    


PDF UPA2670T1R Data sheet ( Hoja de datos )

Número de pieza UPA2670T1R
Descripción DUAL P-CHANNEL MOSFET
Fabricantes Renesas 
Logotipo Renesas Logotipo



Hay una vista previa y un enlace de descarga de UPA2670T1R (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! UPA2670T1R Hoja de datos, Descripción, Manual

μPA2670T1R
DUAL P-CHANNEL MOSFET
–20 V, –3.0 A, 79 mΩ
Data Sheet
R07DS0833EJ0101
Rev.1.01
Apr 15, 2013
Description
The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
1.8V drive available
Low on-state resistance
RDS (on)1 = 79 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A)
RDS (on)2 = 105 mΩ MAX. (VGS = 2.5 V, ID = 1.5 A)
RDS (on)3 = 182 mΩ MAX. (VGS = 1.8 V, ID = 1.5 A)
Built-in gate protection diode
Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
Package
μPA2670T1R-E2-AX1
6pinHUSON2020
Note: 1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
–20 V
Gate to Source Voltage (VDS = 0 V)
VGSS
m10 V
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (1 unit, 5 s) 2
ID(DC)
ID(pulse)
PT1
m3.0 A
m12 A
1.5 W
Total Power Dissipation (2 units, 5 s) 2
PT2
2.3 W
Channel Temperature
Tch 150 °C
Storage Temperature
TSTG
–55 to +150 °C
Notes: 1. PW10 μs, Duty Cycle1%
2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
R07DS0883EJ0101 Rev.1.01
Apr 15, 2013
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 page




UPA2670T1R pdf
μPA2670T1R
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
160
Pulsed
140 VGS = –1.8 V
120 ID = –1.5 A
100
80
60
40
–2.5 V
–1.5 A
–4.5 V
–1.5 A
20
0
-50 0 50 100 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
td(off)
tf
10 td(on)
1
0.1
tr
1
VDD = –10 V
VGS = –4.0 V
RG = 6 Ω
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10
1
0.1
0.01
0
VGS = 0 V
0.5 1 1.5
VF(S–D) - Drain to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
1000
Ciss
100 Coss
VGS = 0 V
f = 1.0 MHz
10
-0.1
-1
Crss
-10 -100
VDS – Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-25
VDD = –16 V
-20 VDS
–10 V
–4 V
-5
VGS
-4
-15 -3
-10 -2
-5 -1
ID = –3.0 A
-0 -0
0123456
QG - Gate Charge - nC
R07DS0833EJ0101 Rev.1.01
Apr 15, 2013
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet UPA2670T1R.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
UPA2670T1RDUAL P-CHANNEL MOSFETRenesas
Renesas

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar