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Número de pieza | UPA2670T1R | |
Descripción | DUAL P-CHANNEL MOSFET | |
Fabricantes | Renesas | |
Logotipo | ||
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No Preview Available ! μPA2670T1R
DUAL P-CHANNEL MOSFET
–20 V, –3.0 A, 79 mΩ
Data Sheet
R07DS0833EJ0101
Rev.1.01
Apr 15, 2013
Description
The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
• –1.8V drive available
• Low on-state resistance
⎯ RDS (on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
⎯ RDS (on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
⎯ RDS (on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
Package
μPA2670T1R-E2-AX∗1
6pinHUSON2020
Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
–20 V
Gate to Source Voltage (VDS = 0 V)
VGSS
m10 V
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation (1 unit, 5 s) ∗2
ID(DC)
ID(pulse)
PT1
m3.0 A
m12 A
1.5 W
Total Power Dissipation (2 units, 5 s) ∗2
PT2
2.3 W
Channel Temperature
Tch 150 °C
Storage Temperature
TSTG
–55 to +150 °C
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
R07DS0883EJ0101 Rev.1.01
Apr 15, 2013
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page μPA2670T1R
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
160
Pulsed
140 VGS = –1.8 V
120 ID = –1.5 A
100
80
60
40
–2.5 V
–1.5 A
–4.5 V
–1.5 A
20
0
-50 0 50 100 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
td(off)
tf
10 td(on)
1
0.1
tr
1
VDD = –10 V
VGS = –4.0 V
RG = 6 Ω
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10
1
0.1
0.01
0
VGS = 0 V
0.5 1 1.5
VF(S–D) - Drain to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
1000
Ciss
100 Coss
VGS = 0 V
f = 1.0 MHz
10
-0.1
-1
Crss
-10 -100
VDS – Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-25
VDD = –16 V
-20 VDS
–10 V
–4 V
-5
VGS
-4
-15 -3
-10 -2
-5 -1
ID = –3.0 A
-0 -0
0123456
QG - Gate Charge - nC
R07DS0833EJ0101 Rev.1.01
Apr 15, 2013
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet UPA2670T1R.PDF ] |
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