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PDF UPA2660T1R Data sheet ( Hoja de datos )
| Número de pieza | UPA2660T1R | |
| Descripción | DUAL N-CHANNEL MOSFET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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μPA2660T1R
DUAL N-CHANNEL MOSFET
20 V, 4.0 A, 42 mΩ
Data Sheet
R07DS0999EJ0100
Rev.1.00
Jan 16, 2013
Description
The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
• DS MAXIMUM RATINGS 20V(TA = 25°C)
• 2.5V drive available
• Low on-state resistance
⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
• Built-in gate protection diode
• Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
Package
μPA2660T1R-E2-AX∗1
6pinHUSON2020(Dual)
Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
20 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12 V
Drain Current (DC)
ID(DC)
±4.0 A
Drain Current (pulse) ∗1
ID(pulse)
±16 A
Total Power Dissipation (1 unit, 5 s) ∗2
PT1
1.5 W
Total Power Dissipation (2 units, 5 s) ∗2
PT2
2.3 W
Channel Temperature
Tch 150 °C
Storage Temperature
TSTG
–55 to +150 °C
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
Caution: This product is electrostatic-sensitive device due to low ESD capability and should be handled
with caution for electrostatic discharge.
VESD = ±400V MIN. ( C = 100pF, R = 1.5KΩ )
R07DS0999EJ0100 Rev.1.00
Jan 16, 2013
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
μPA2660T1R
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
Pulsed
ID = 2.0A
80
60 VGS = 2.5V
40
4.5V
20
0
-50
0 50 100 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10 tf
tr
1
0.1
1
VDD = 10V
VGS = 4.5V
RG = 6Ω
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
VGS=4.5V
10 2.5V
0V
1
0 0.5 1 1.5
VF(S–D) - Drain to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
1,000
Ciss
100
VGS = 0V
f = 1.0MHz
10
0.1
1
Coss
Crss
10 100
VDS – Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
25
20 VDS
VDD= 20V
16V
10V
12
VGS
10
8
15 6
10 4
52
ID=4.0A
00
0123456
QG - Gate Charge - nC
R07DS0999EJ0100 Rev.1.00
Jan 16, 2013
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA2660T1R.PDF ] | |
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