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PDF 2SA1937 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1937 | |
| Descripción | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SA1937 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1937
High-Voltage Switching Applications
2SA1937
Unit: mm
• High voltage: VCEO = −600 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
−600
−600
−7
−0.5
−1
−0.25
1
10
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
―
―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7B1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1937.PDF ] | |
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