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PDF RJK4002DPD Data sheet ( Hoja de datos )
| Número de pieza | RJK4002DPD | |
| Descripción | High Speed Power Switching MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK4002DPD
400V - 3A - MOS FET
High Speed Power Switching
Features
• Low on-state resistance
RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C)
• Low drive current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
12 3
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR
Note1
(pulse)
IAP Note2
EAR Note2
Pch Note3
Channel to case thermal Impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. STch = 25°C, Tch ≤ 150°C
3. Value at Tc = 25°C
Preliminary Datasheet
R07DS0835EJ0210
Rev.2.10
Jan 29, 2014
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
400
±30
3
6
3
6
2.5
0.357
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS0835EJ0210 Rev.2.10
Jan 29, 2014
Page 1 of 6
1 page  
RJK4002DPD
10
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Tc = 25°C
1 D=1
0.5
0.2
0.1
0.1 0.05
0.02
0.10s1hot pulse
0.01
10 μ
100 μ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10 100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 200 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0835EJ0210 Rev.2.10
Jan 29, 2014
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK4002DPD.PDF ] | |
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