|
|
Número de pieza | 2SA1924 | |
Descripción | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SA1924 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1924
High-Voltage Switching Applications
2SA1924
Unit: mm
• High breakdown voltage: VCEO = −400 V
• Low saturation voltage: VCE (sat) = −1 V (max)
(IC = −100 mA, IB = −10 mA)
• Collector metal (fin) is fully covered with mold resin.
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
−400
−400
−7
−0.5
−1
−0.25
1.5
10
150
−55 to 150
Electrical Characteristics (Tc = 25°C)
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
VCEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
Test Condition
VCB = −400 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −5 V, IC = −20 mA
VCE = −5 V, IC = −100 mA
IC = −100 mA, IB = −10 mA
IC = −100 mA, IB = −10 mA
VCE = −5 V, IC = −50 mA
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ. Max
―
―
−400
140
140
―
―
―
―
―
―
―
―
―
−0.4
−0.76
35
18
−10
−1
―
450
400
−1.0
−0.9
―
―
Unit
µA
µA
V
V
V
MHz
pF
Turn-on time
Switching time Storage time
Fall time
ton 20 µs A line indIB1 Output ― 0.2 ―
l d (Pb
tstg
IB2
― 2.3 ―
µs
VCC = −200 V
tf IB1 = −10 mA, IB2 = 20 mA,
duty cycle ≤ 1%
1
― 0.2 ―
2004-07-26
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SA1924.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SA1920 | (2SA1870 - 2SA1920) High Voltage Switching Transistor | ROHM Semiconductor |
2SA1923 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | Toshiba Semiconductor |
2SA1924 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | Toshiba Semiconductor |
2SA1925 | TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) | Toshiba Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |