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PDF IRL6372PBF Data sheet ( Hoja de datos )
| Número de pieza | IRL6372PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
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VDS
VGS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
30
±12
17.9
11
8.1
V
V
mΩ
nC
A
PD - 97622
IRL6372PbF
HEXFET® Power MOSFET
6
*
6
*
'
'
'
'
SO-8
Applications
• Battery operated DC motor inverter MOSFET
• System/Load Switch
• Charge and Discharge Switches for Battery Application
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Resulting Benefits
Multi-Vendor Compatibility
⇒ Environmentally Friendlier
Increased Reliability
Orderable part number
IRL6372PBF
IRL6372TRPBF
Package Type
SO-8
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 4.5V
cPulsed Drain Current
ePower Dissipation
ePower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Notes through are on page 2
www.irf.com
Max.
30
±12
8.1
6.5
65
2.0
1.3
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet http:0//1w/1w7w/2.d0a1t1asheet4u.com/
1 page  
40
ID = 8.1A
35
30
25
TJ = 125°C
20
15
10 TJ = 25°C
5
1 2 3 4 5 6 7 8 9 10 11 12
Fig
12.
OVnG-SR, eGsaitset-aton-cSeouvrsc.e
Voltage (V)
Gate Voltage
250
ID
TOP 1.2A
200 1.8A
BOTTOM 6.5A
150
IRL6372PbF
70
60
50
Vgs = 2.5V
40
30
20 Vgs = 4.5V
10
0
10 20 30 40 50 60
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
25000
20000
15000
100 10000
50 5000
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
0
1E-8
1E-7
1E-6 1E-5
Time (sec)
1E-4
1E-3
Fig 15. Typical Power vs. Time
+
-
RG
www.irf.com
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD +
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
*VGS=10V
VDD
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRL6372PBF.PDF ] | |
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