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PDF IRFHM9331PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFHM9331PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
(@TA = 25°C)
-30
14.6
32
-11
V
mΩ
nC
A
IRFHM9331PbF
HEXFET® Power MOSFET
S
5D G4 D
6D S 3 D
7D S 2 D
S
S
G
8D S 1
D
3mm x 3mm PQFN
Applications
l System/load switch
Features and Benefits
Features
Low Thermal Resistance to PCB (<6.0°C/W)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
results in Easier Manufacturing
⇒ Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM9331TRPbF
IRFHM9331TR2PbF
Package Type
PQFN 3mm x 3mm
PQFN 3mm x 3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
cContinuous Drain Current, VGS @ -10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-30
± 25
-11
-9
i-24
-24
-90
2.8
1.8
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
1 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013
1 page  
IRFHM9331PbF
30
ID = -11A
25
20
TJ = 125°C
15
10
5
0
TJ = 25°C
5 10 15 20 25
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
350
ID
300 TOP -1.9A
-2.9A
250 BOTTOM -9.0A
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
100
80
60
40 Vgs = -4.5V
20
Vgs = -10V
0
0 20 40 60 80 100
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
1000
800
600
400
200
0
1E-5
1E-4
1E-3 1E-2
Time (sec)
1E-1
1E+0
Fig 15. Typical Power vs. Time
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
VDD
ISD
* Reverse Polarity of D.U.T for P-Channel
* VGS = 5V for Logic Level Devices
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFHM9331PBF.PDF ] | |
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