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PDF IRFH7911PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH7911PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 97427D
IRFH7911PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
Q1
30
8.6
8.3
13
Q2
30 V
3.0 m:
34 nC
28 A
Ã
'
Ã
*
1&
6' 6
*
Dual PQFN 5X6 mm
Applications
• Control and synchronous MOSFET for buck converters
Features and Benefits
Features
Control and synchronous FET in one package
Low charge control MOSFET (8.3 nC typical)
Low RDSon synchronous MOSFET (< 3.0 mΩ)
100% Rg tested
Low Profile (≤ 0.9 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL2, Consumer Qualification
Benefits
Increased power density
(50% vs two PQFN 5x6)
Lower switching losses
results in Lower conduction losses
⇒ Increased reliability
Increased power density
Easier manufacturing
Environmentally Friendlier
Increased reliability
Orderable part num ber
Package Type
I RFH79 11 TR PB F
PQFN 5mm x 6mm
I RFH79 11 TR 2P BF
PQFN 5mm x 6mm
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Standard Pack
Form
Qua ntity
Tape and Reel
4 00 0
Tape and Reel
40 0
Q1 Max.
Q2 Max.
30
± 20
13 28
10 23
100 230
2.4 3.4
1.5 2.2
0.019
0.027
-55 to + 150
Note
Units
V
A
W
W/°C
°C
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
fJunction-to-Case
gJunction-to-Ambient
Q1 Max.
7.7
53
Q2 Max.
2.5
Units
°C/W
37
1
Free Datasheet http://www07.d/1a1ta/1sh2eet4u.com/
1 page  
Q1 - Control FET
2.0
ID = 12A
VGS = 10V
1.5
Typical Characteristics
IRFH7911PbF
Q2 - Synchronous FET
2.0
ID = 26A
VGS = 10V
1.5
1.0 1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
1000
100
TJ = 150°C
10
1.00
TJ = 25°C
VGS = 0V
0.10
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
25
ID = 13A
20
15
TJ = 125°C
10
TJ = 25°C
5
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
www.irf.com
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
1000
100 TJ = 150°C
10
1.00
TJ = 25°C
VGS = 0V
0.10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
12
ID = 26A
10
8
6
TJ = 125°C
4
TJ = 25°C
2
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFH7911PBF.PDF ] | |
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