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PDF IRF9335PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF9335PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96311A
IRF9335PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-30 V
59 mΩ
110 mΩ
9.1 nC
-5.4 A
S1
S2
S3
G4
8D
7D
6D
5D
SO-8
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
• System/Load Switch
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
results in Multi-Vendor Compatibility
⇒ Environmentally Friendlier
Orderable part number
IRF9335PbF
IRF9335TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ -10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
-30
±20
-5.4
-4.3
-43
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through are on page 2
www.irf.com
1
Free Datasheet http://w0w6w/1.d7a/1ta0sheet4u.com/
1 page  
160
ID = -5.4A
140
120
100
80
TJ = 125°C
60
40 TJ = 25°C
20
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
450
400 ID
TOP -1.5A
350 -2.3A
BOTTOM -4.3A
300
250
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRF9335PbF
400
300
200
Vgs = -4.5V
100
Vgs = -10V
0
0 5 10 15 20 25 30
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
1000
800
600
400
200
0
1E-5
1E-4
1E-3 1E-2
Time (sec)
1E-1
1E+0
Fig 15. Typical Power vs. Time
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
VDD
ISD
* Reverse Polarity of D.U.T for P-Channel
* VGS = 5V for Logic Level Devices
www.irf.com
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF9335PBF.PDF ] | |
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