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Número de pieza | IRF9333PBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF9333PBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! VDS
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
-30 V
19.4 m:
32.5 m:
14 nC
-9.2 A
6
6
6
*
PD - 97523
IRF9333PbF
HEXFET® Power MOSFET
'
'
'
'
SO-8
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF933 3Pb F
IRF933 3TRPb F
Package Type
SO8
SO8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Standard Pack
For m
Quantity
Tu be/B ulk
95
Tape and Reel
4 000
Max.
-30
± 20
-9.2
-7.3
-75
2.5
1.6
0.02
-55 to + 150
Note
Units
V
A
W
W/°C
°C
Notes through are on page 2
www.irf.com
1
Free Datasheet http://ww6w/2.d1a/1ta0sheet4u.com/
1 page 60
ID = -9.4A
50
40
30
TJ = 125°C
20
TJ = 25°C
10
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
420
ID
360 TOP -2.1A
-3.0A
300 BOTTOM -7.5A
240
180
120
60
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRF9333PbF
80
70
60
50 VGS = -4.5V
40
30
20 VGS = -10V
10
0
10 20 30 40 50 60 70
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
1000
800
600
400
200
0
1E-5
1E-4
1E-3
1E-2
Time (sec)
1E-1
Fig 16. Typical Power vs. Time
1E+0
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
VDD
ISD
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRF9333PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF9333PBF | HEXFET Power MOSFET | International Rectifier |
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