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PDF DMN3150LW Data sheet ( Hoja de datos )
| Número de pieza | DMN3150LW | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN3150LW
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance:
RDS(ON) < 88mΩ @ VGS = 4.5V
RDS(ON) < 138mΩ @ VGS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
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SOT-323
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Drain
D
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
TA = 25°C
TA = 70°C
Pulsed
Gate
Source
EQUIVALENT CIRCUIT
Symbol
VDSS
VGSS
ID
IDM
IS
GS
Pin Configuration
Value
28
±12
1.6
1.2
6.4
1.5
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
350
357
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BVDSS
28
⎯
⎯
V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯ 800 nA
Gate-Body Leakage
IGSS
⎯
⎯
±80
±800
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
0.62
0.94
1.4
V
Static Drain-Source On-Resistance
RDS(ON)
⎯
⎯
73
115
88
138
mΩ
Forward Transconductance
|Yfs| ⎯ 5.4 ⎯
S
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
VSD
⎯
⎯ 1.16 V
Input Capacitance
Ciss ⎯ 305 ⎯
pF
Output Capacitance
Coss
⎯
74
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
48
⎯
pF
Notes:
1. Device mounted on 1in2 FR-4 PCB on 2oz. Copper. t ≤ 10 sec.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250μA
VDS = 28V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±19V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 1.6A
VGS = 2.5V, ID = 1.2A
VDS = 5V, ID = 2.7A
VGS = 0V, IS = 1.5A
VDS = 5V, VGS = 0V
f = 1.0MHz
DMN3150LW
Document number: DS31514 Rev. 1 - 2
1 of 4
www.diodes.com
August 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
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| PDF Descargar | [ Datasheet DMN3150LW.PDF ] | |
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