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PDF 2SA1873 Data sheet ( Hoja de datos )

Número de pieza 2SA1873
Descripción Silicon PNP Epitaxial Type Transistor
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 2SA1873 Hoja de datos, Descripción, Manual

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1873
2SA1873
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
High hFE
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
Complementary to 2SC4944
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
VCBO
VCEO
VEBO
IC
IB
PC
(Note 1)
50
50
5
150
30
200
V
V
V
mA
mA
mW
Junction temperature
Tj
125 °C
JEDEC
Storage temperature range
Tstg
55~125
°C
JEITA
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2L1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 6.2 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Collector cut-off current
ICBO
VCB = −50 V, IE = 0
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
DC current gain
hFE
(Note)
VCE = −6 V, IC = −2 mA
Collector-emitter saturation voltage
VCE (sat) IC = −100 mA, IB = −10 mA
Transition frequency
fT VCE = −10 V, IC = −1 mA
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note 2: hFE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
1
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
120 400
⎯ −0.1 0.3 V
80 ⎯ ⎯ MHz
4
7 pF
2007-11-01

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