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PDF 2SA1816 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1816 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
s Features
q High collector to emitter voltage VCEO.
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–150
–150
–5
–100
–50
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICBO
VCEO
VEBO
hFE*1
VCB = –100V, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
–150
–5
90
–1 µA
V
V
450
Collector to emitter saturation voltage VCE(sat)
IC = –30mA, IB = –3mA
–1 V
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz
200 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
5 pF
Noise voltage
VCE = –10V, IC = – 1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
150
mV
*1hFE Rank classification
Rank
Q
R
hFE 90 ~ 155 130 ~ 220
S
185 ~ 330
T
260 ~ 450
1
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