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PDF FD6M016N03 Data sheet ( Hoja de datos )
| Número de pieza | FD6M016N03 | |
| Descripción | 30V/80A Synchronous Rectifier Module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FD6M016N03
30V/80A Synchronous Rectifier Module
June 2008
Power-SPMTM
tm
General Features
• Very High Rectification Efficiency at Output 12V
• Integrated Solution for Saving Board Space
• RoHS Compliant
MOSFET Features
• VDSS = 30V
• QG(TOTAL) = 132nC(Typ.), VGS = 5V
• RDS(ON) = 1.3mΩ(Typ.), VGS = 10V, ID = 40A
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Fully Isolated package
General Description
The FD6M016N03 is one product in the Power-SPMTM family
that Fairchild has newly developed and designed to be most
suitable for more compact and more efficient synchronous recti-
fication applications such as internet server power supplies and
telecom system power supplies. For higher efficiency, it includes
built-in very low RDS(ON) MOSFETs. This Power-SPM device
can be used in the secondary side of the PWM transformer of
forward/bridge converter to provide high current rectification at
output voltages ranging from 12 Volts down to 5 Volts. With this
product, it is possible to design the secondary side of power
supply systems with reduced parasitic elements resulting in
minimized voltage spike and EMI noise.
Applications
• High Current Isolated Converter
• Distributed Power Architectures
• Synchronous rectifivation
• DC/DC Converter
• Battery supplied application
• ORing MOSFET
1
Block Diagram
10
G2
9
15
EPM15 Package
D2 15
8
G1
6
7
14
13
S2
12
11
D1 S1
1 2345
Figure 1. FD6M016N03 Module Block Diagram
©2008 Fairchild Semiconductor Corporation
FD6M016N03 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
* Notes:
1. VGS = 0V
2. ID = 250μA
1.00
Figure 8. On-Resistance Variation
vs. Temperature
2.0
1.5
1.0
0.90
0.85
-50 0 50 100 150
TJ, Junction Temperature [°C]
200
0.5
0.0
-50
0
* Notes :
1. VGS = 10 V
2. ID = 40 A
50 100 150 200
TJ, Junction Temperature [°C]
Figure 9. Transient Thermal Response Curve
10
0.5
1 0.2
0.1
0.05
0.1 0.02
0.01
0.01
Single pulse
0.001
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 3.9oC/W Typ.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
Figure 10. Maximum Safe Operating Area
500
100 10μs
1ms
10ms
DC
10 Operation in This Area
is Limited by R DS(on)
* Notes :
1 1. TC = 25 oC
2. TJ = 125 oC
3. Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage [V]
50
Figure 11. Unclamped Inductive Switching
Capability
500
100
If R = 0
tAV = (L)(IAS)/(1.3*Rated BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1]
Starting TJ = 25oC
10
Starting TJ = 100oC
1
0.01
0.1 1 10 100 1000
tAV, Time In Avalanche [ms]
FD6M016N03 Rev. A
5 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FD6M016N03.PDF ] | |
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