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PDF N0603N Data sheet ( Hoja de datos )
| Número de pieza | N0603N | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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N0603N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0559EJ0100
Rev.1.00
Nov 07, 2011
Description
The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low input capacitance
Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current
ID(DC) = ±100 A
• RoHS Compliant
Ordering Information
Part No.
N0603N-S23-AY ∗1
Lead Plating
Pure Sn (Tin)
Packing
Tube
50 p/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-262
1.8 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗2
Single Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±100
±400
156
1.5
150
−55 to +150
55
300
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
0.80
83.3
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 μH
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
N0603N
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
8
6
4
2
0
-50
VGS = 10 V
ID = 50 A
Pulsed
0 50 100 150
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
tf
td(off)
10
tr
1
0.1
td(on)
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
0.1
0.01
0
Pulsed
0.4 0.8 1.2 1.6
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
VGS = 0 V
f = 1.0 MHz
100
0.01 0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
14
12
10
8
6
4
2
0
0
VDD = 12 V
30 V
48 V
ID = 100 A
20 40 60 80 100 120 140
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
VGS = 0 V
di/dt = 100 A/µs
1 10 100
IF - Diode Forward Current - A
R07DS0559EJ0100 Rev.1.00
Nov 07, 2011
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet N0603N.PDF ] | |
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