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PDF FGA30N65SMD Data sheet ( Hoja de datos )
| Número de pieza | FGA30N65SMD | |
| Descripción | Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 2013
FGA30N65SMD
650 V, 30 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Induction Heating
• Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild®’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder, induction heating, tele-
com, ESS and PFC applications where low conduction and
switching losses are essential.
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
1
C
G
E
Ratings
650
20
30
60
30
90
40
20
120
300
150
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
15
30A
IC = 15A
10
60A
5
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
10000
1000
Cies
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
20
5 10 15 20 25 30
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
100
10s
100s
10
1ms
10ms
DC
1
0.1 *Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
1 10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 175oC
16
12
8 15A
IC = 30A
60A
4
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
200V
9
VCC = 100V
300V
6
3
0
0 25 50 75 100
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
tr
10
3
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG []
50
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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| PDF Descargar | [ Datasheet FGA30N65SMD.PDF ] | |
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