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PDF FDMS86102LZ Data sheet ( Hoja de datos )

Número de pieza FDMS86102LZ
Descripción N-Channel Power Trench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS86102LZ Hoja de datos, Descripción, Manual

May 2011
FDMS86102LZ
N-Channel Power Trench® MOSFET
100 V, 22 A, 25 mΩ
Features
General Description
„ Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A
„ Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A
„ HBM ESD protection level > 6 KV typical (Note 4)
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced Power Trench® process
that has been special tailored to minimize the on-state
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Applications
„ DC - DC Conversion
„ Inverter
„ Synchronous Rectifier
Top Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
22
37
7
40
84
69
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
50
°C/W
Device Marking
FDMS86102Z
Device
FDMS86102LZ
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS86102LZ Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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FDMS86102LZ pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
100
10
1
0.5
10-4
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 13. Single Pulse Maximum Power Dissipation
100
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
0.001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2011 Fairchild Semiconductor Corporation
FDMS86102LZ Rev. C
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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