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PDF FDMC8678S Data sheet ( Hoja de datos )
| Número de pieza | FDMC8678S | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 2009
FDMC8678S
N-Channel Power Trench® SyncFETTM
30V, 18A, 5.2mΩ
tm
Features
General Description
Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A
Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
The FDMC8678S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest rDS(on) while maintaining excellent switching
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
MSL1 robust package design
RoHS Compliant
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Pin 1
S
S
S
G
D5
D6
4G
3S
TOP
D
D
D
D
Power 33
BOTTOM
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
18
66
15
60
181
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
8678S
Device
FDMC8678S
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC8678S Rev.C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
1E-3
1E-4
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
100
1000
FDMC8678S Rev.C1
5 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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