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PDF FDMC8676 Data sheet ( Hoja de datos )
| Número de pieza | FDMC8676 | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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December 2007
FDMC8676
N-Channel PowerTrench® MOSFET
30V, 18A, 5.9mΩ
tm
Features
General Description
Max rDS(on) = 5.9mΩ at VGS = 10V, ID = 14.7A
Max rDS(on) = 9.3mΩ at VGS = 4.5V, ID = 11.5A
Low Profile - 1mm max in Power 33
RoHS Compliant
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low rDS(on) has been maintained to
provide an extremely versatile device.
Applications
High efficiency DC-DC converter
Notebook DC-DC conversion
Multi purpose point of load
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
Power 33
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
TC = 25°C
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 3)
Ratings
30
±20
18
66
16
60
41
2.3
216
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC8676
Device
FDMC8676
Package
Power 33
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
0.001
0.0005
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
100
1000
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.C
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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