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PDF FDMC8651 Data sheet ( Hoja de datos )
| Número de pieza | FDMC8651 | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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July 2008
FDMC8651
N-Channel Power Trench® MOSFET
30 V, 20 A, 6.1 mΩ
Features
General Description
Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A
Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low rDS(on) has been maintained to
provide a sub logic-level device.
Applications
Synchronous rectifier
3.3 V input synchronous buck switch
Top Bottom
S Pin 1
S
S
G
D
D
D
D
Power 33
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±12
20
64
15
60
128
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC8651
Device
FDMC8651
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
1E-3
0.0001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC8651.PDF ] | |
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