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PDF FDMC86248 Data sheet ( Hoja de datos )

Número de pieza FDMC86248
Descripción N-Channel Power Trench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMC86248 Hoja de datos, Descripción, Manual

September 2012
FDMC86248
N-Channel Power Trench® MOSFET
150 V, 13 A, 90 mΩ
Features
General Description
„ Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A
„ Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
„ Primary MOSFET
„ MV synchronous rectifier
Top Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
Power 33
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
13
3.4
15
37
36
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.4
53
°C/W
Device Marking
FDMC86248
Device
FDMC86248
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC86248 Rev. C3
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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FDMC86248 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMC86248 Rev. C3
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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