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Número de pieza | FDMC86244 | |
Descripción | N-Channel Power Trench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMC86244 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! February 2012
FDMC86244
N-Channel Power Trench® MOSFET
150 V, 9.4 A, 134 mΩ
Features
General Description
Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.8 A
Max rDS(on) = 186 mΩ at VGS = 6 V, ID = 2.4 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC - DC Conversion
Top
8765
Bottom
DD D D
1 234
GS S S
MLP 3.3x3.3
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
9.4
2.8
12
12
26
2.3
-55 to + 150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.7
125
°C/W
Device Marking
FDMC86244
Device
FDMC86244
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMC86244 Rev.C1
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMC86244.PDF ] |
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