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PDF FDMC86106LZ Data sheet ( Hoja de datos )
| Número de pieza | FDMC86106LZ | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC86106LZ
N-Channel Power Trench® MOSFET
100 V, 7.5 A, 103 mΩ
December 2010
Features
General Description
Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
HBM ESD protection level > 3 KV typical (Note 4)
100% UIL Tested
RoHS Compliant
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench® process
that has been special tailored to minimize the on-state
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application
DC - DC Conversion
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
7.5
9.6
3.3
15
12
19
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
6.5
53
°C/W
Device Marking
FDMC86106Z
Device
FDMC86106LZ
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC86106LZ Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
500
100
10
1
0.5
10-4
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 13. Single Pulse Maximum Power Dissipation
2
1 DUTY CYCLE-DESCENDING ORDER
100
0.1
0.01
0.001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2010 Fairchild Semiconductor Corporation
FDMC86106LZ Rev.C
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC86106LZ.PDF ] | |
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